PART |
Description |
Maker |
IXTQ22N60P IXTV22N60PS |
MOSFET N-CH 600V 22A TO-3P 22 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp. IXYS Corporation
|
FCPF22N60NT |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 |
800V 22A Phase Control SCR in a TO-208AA (TO-48) package 1600V 35A Phase Control SCR in a TO-208AA (TO-48) package 1400V 35A Phase Control SCR in a TO-208AA (TO-48) package 1200V 22A Phase Control SCR in a TO-208AA (TO-48) package 1000V 22A Phase Control SCR in a TO-208AA (TO-48) package 100V 22A Phase Control SCR in a TO-208AA (TO-48) package 600V 22A Phase Control SCR in a TO-208AA (TO-48) package MEDIUMPOWERTHYRISTORS 400V 22A Phase Control SCR in a TO-208AA (TO-48) package Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier] International Rectifier, Corp.
|
STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
22N65L-T47-T 22N6511 22N65G-T47-T |
22A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
RF1S22N10SM RFP22N10 |
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
STB24NF10 |
N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
APT5024SVR |
POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5024BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
|
Advanced Power Technology Ltd.
|